Progress on high-voltage pulse generators, using low voltage semiconductors (<1 kV), designed for plasma immersion ion implantation (PIII)

摘要: A modular concept on high-voltage pulse generators, under development for future use in facilities plasma immersion ion implantation, is presented. The generator proposed uses individual modules, each one consisting of a circuit based step-up transformer; the secondary transformer connected series. Each delivers fraction total voltage with primary supplied via an isolation transformer. With this topology we expect to achieve tens kiloVolts low semiconductor switches (<1 kV). three 5 kV-module initial prototype was assembled 800 V and experimentally tested output 11 kV, μs width 10 kHz-pulse frequency. Different load conditions results are presented discussed.