The Mott transition and optimal performance of transparent conducting oxides in thin-film solar cells

摘要: The performance of thin-film solar cells is critically dependent upon the effective operation transparent conducting oxide (TCO) layers, which play a significant role in both optical and electrical power transmission through these photovoltaic devices. In this article, we model TCO layers as function electron carrier density, n, its mobility, μ. properties layer are described by simple Drude degenerate free gas concomitant electromagnetic absorption due to skin-depth effects thereby calculated. Above critical density for composition-induced Mott Insulator-Conductor Transition, TCOs exhibit metallic-type conduction. However, with increasing (carrier) above transition, transparency significantly decreased. Importantly, order achieve high conductivity whilst preserving layer, mobilities need be increased preference densities. To reach higher any given system, propose that one should move material close transition. A ionized impurity scattering indium tin (ITO) at densities allows direct comparison μ-n relationship real total such We determine decreasing from 2.6 × 1021 cm−3 2 an ITO can decrease large amount (around 8% relative minimum theoretical absorption).