作者: Xiaohong Sun , Yifeng Shi , Huiming Ji , Xiaolei Li , Shu Cai
DOI: 10.1016/J.JALLCOM.2012.08.003
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摘要: Abstract Ordered mesoporous indium tin oxide (ITO) materials were successfully synthesized by doping element into the nanocast-synthesized In 2 O 3 intermediate via a post-treatment process. The particle size can be systematically controlled utilizing “container effect” during synthesis of intermediate. With increase Sn concentration, electrical resistivity first decreases and then increases. minimum value is 0.34 Ω cm for ITO sample with 10 mol% concentration. We also discussed effect calcinations atmosphere temperature on crystallinity, regularity conducting properties in detail. products prepared this work possess high thermal stability up to 700 °C may used as excellent optoelectronic at elevated without any detectable collapse porosity.