Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver
作者： Hidetaka Nishi , Tai Tsuchizawa , Rai Kou , Hiroyuki Shinojima , Takashi Yamada
DOI: 10.1364/OE.20.009312
关键词:
摘要: On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by AWG, optical-electrical signal conversion Ge PDs, high-speed detection at all channels. In addition, mounted multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on fabricated AWG-PD device flip-chip bonding The results show promising potential of our Si platform as photonics-electronics convergence.
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