SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

作者: Komori Yosuke

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摘要: According to one embodiment, a semiconductor memory device includes, first interconnect layer provided on insulating and including conductive layer, second above the having composition different from that of pillar extending through layers third charge storage fourth which are stacked side surface layer.

参考文章(12)
Megumi Ishiduki, Masaru Kidoh, Ryota Katsumata, Hideaki Aochi, Yosuke Komori, Yoshiaki Fukuzumi, Hiroyasu Tanaka, Masaru Kito, Non-volatile semiconductor storage device and method of manufacturing the same ,(2009)
晃寛 仁田山, 英明 青地, 竜太 勝又, Akihiro Nitayama, Hideaki Aochi, Hiroyasu Tanaka, Masaru Kito, 啓安 田中, Ryuta Katsumata, Takashi Kito, 大 木藤, 傑 鬼頭, Non-volatile semiconductor memory device and manufacturing method therefor ,(2006)
Toshiyuki Sasaki, Kazuhito Furumoto, Semiconductor memory device and method for manufacturing the same ,(2016)
Hiroaki Nakano, Toshimasa Namekawa, Atsushi Nakayama, Hiroshi Ito, Osamu Wada, Non-volatile semiconductor storage device ,(2007)