de Haas-van Alphen Effect in Thallium

作者: Y. Ishizawa , W. R. Datars

DOI: 10.1103/PHYSREVB.2.3875

关键词:

摘要: The de Haas\char22{}van Alphen (dHvA) effect in single crystals of high-purity thallium has been investigated magnetic fields up to 55 kOe. These measurements extend previous work by providing accurate dHvA frequencies for field directions the three principal crystallographic planes. larger than ${10}^{7}$ G are assigned orbits on third-zone hole surface centered at $A$ and fourth-zone hexagonal network Soven's relativistic orthogonalized-plane-wave model. Comparisons with single-orthogonalized-plane-wave Fermi-surface model also made. Magnetic breakdown some is observed. Lower a small dumbbell-shaped symmetry $\overline{6}m2$. cyclotron masses this presented compared recent resonance results.

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