Etude par spectroscopie d'emission optique de decharges radiofrequence et micro-onde lors du depot chimique en phase vapeur (PACVD) dans le systeme Si-C-H-Ar
作者： M ANDRIEUX , J BADIE , M DUCARROIR , L THOMAS
DOI: 10.1016/S0151-9107(99)80021-X
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摘要: Abstract This work highlights optical emission spectroscopy (OES) results used for a better understanding of processes occuring in radiofrequency and microwave plasma enhanced chemical vapor deposition the Si-C-H-Ar gas system. Optical lines such as Si + H α (λ = 634.71; 656.29 nm), C 2 516.52 CH SiH 431.42; 412.80 nm) can be considered tracers species plasmas. Process parameters (growth rate, composition, residual stresses films temperature) have their signatures (respectively: , rotational G 1 Σ g → B u structure ).
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