The Thermal Conductivity of Germanium and Silicon between 2 and 300 degrees K

摘要: The thermal conductivity of single crystals pure n-type germanium and p-type containing from 10$^{14}$ to 10$^{19}$ group III impurity atoms per cm$^{3}$ has been measured 2 90 degrees K. In some cases the readings have extended up room temperature. Whereas low-temperature specimens is that which one would expect a dielectric crystal, addition even very small amounts decreases considerably alters its temperature dependence. It suggested extra resistance introduced due scattering lattice vibrations by electrons or holes in energy levels. theory such worked out Ziman, experimental results are shown be fair agreement with this theory. A silicon crystal gold-doped show behaviour similar germanium. room-temperature 0$\cdot $64 1$\cdot $45 watt units respectively.