作者: Tae Young Ma , Hyun Yeol Moon
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摘要: Zinc oxide (ZnO) films were deposited on (0 0 1) sapphire substrates from a solution containing zinc acetate. The in vertical type hot wall reactor by the pyrolysis of an aerosol produced ultrasonic generator. To increase resistivity films, copper doping and annealing ambient water vapor (vapor annealing) carried out. 0.5 wt % doped ZnO film was around 24 Ω cm. resulted 107-fold resistivity. After annealing, crystallinity improved, as determined X-ray diffraction (XRD) analysis scanning electron microscopy (SEM). All annealed at 600°C for 2 h exhibited strong 2) orientation with smooth surface crystallinity, morphology, composition electrical properties as-deposited vapor-annealed investigated.