Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips

摘要: Metallized via-holes and a wraparound metal plating are simultaneously formed on semiconductor chips by patterning photoresist mask the front surface of wafer to open windows over pads as well grid areas where is desired; etching off exposed if necessary forming grooves in reactive ion depth which less than total thickness wafer; depositing thin conductive film along walls electroless methods; with electrolytic removing back ("backlapping") floors both via-holes, expose wall separate individual chips; and, complete grounding path.