Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography.

作者: Enric Menéndez , Hiwa Modarresi , Claire Petermann , Josep Nogués , Neus Domingo

DOI: 10.1002/SMLL.201603465

关键词:

摘要: The combination of lithography and ion implantation is demonstrated to be a suitable method prepare lateral multilayers. A laterally, compositionally, magnetically modulated microscale pattern consisting alternating Co (1.6 µm wide) Co-CoO (2.4 lines has been obtained by oxygen into lithographically masked Au-sandwiched thin film. Magnetoresistance along the (i.e., current applied magnetic field are parallel lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic GMR contributions distinguished low temperature 10 K) since O-implanted areas become exchange coupled. This planar principally ascribed spatial modulation coercivity in spring-magnet-type configuration, which results 180° Neel extrinsic domain walls Co/Co-CoO interfaces. versatility, terms size, morphology, composition adjustment, this offers unique route fabricate systems for, among others, spintronic research applications.

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