Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation

作者: VG Dubrovskii , GE Cirlin

DOI: 10.1134/1.2128448

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摘要: A kinetic model of thin-film growth on a solid surface is investigated. This valid in the case where layers are formed as result two-dimensional nucleation. Under conditions high supersaturation gaseous phase, solutions obtained for an island-size distribution function at initial stage growth, degree filling substrate by islands coalescence stage, vertical-growth rate film, and its roughness. These express structural characteristics growing film terms physical constants (the interphase energy gas-solid interface activation barriers diffusion desorption) system parameters temperature material-deposition rate). The results make it possible to calculate dynamics thin films particular systems.

参考文章(9)
Dimo Kashchiev, Nucleation : basic theory with applications Butterworth Heinemann. ,(2000)
D. Kashchiev, Growth kinetics of dislocation-free interfaces and growth mode of thin films Journal of Crystal Growth. ,vol. 40, pp. 29- 46 ,(1977) , 10.1016/0022-0248(77)90029-X
Sergey A. Kukushkin, Andrew V. Osipov, Perturbation theory in the kinetics of first-order phase transitions Journal of Chemical Physics. ,vol. 107, pp. 3247- 3252 ,(1997) , 10.1063/1.474675
V. G. Dubrovskii, Nucleation and growth of adsorbed layer : self-consistent approach based on Kolmogoroff-Avrami model Physica Status Solidi B-basic Solid State Physics. ,vol. 171, pp. 345- 356 ,(1992) , 10.1002/PSSB.2221710206
Donald A. McQuarrie, Handbook of Mathematical Functions American Journal of Physics. ,vol. 34, pp. 177- 177 ,(1966) , 10.1119/1.1972842
A.Y. Cho, J.R. Arthur, Molecular beam epitaxy Progress in Solid State Chemistry. ,vol. 10, pp. 157- 191 ,(1975) , 10.1016/0079-6786(75)90005-9