Growth kinetics and crystal structure of semiconductor nanowires
作者： V. G. Dubrovskii , N. V. Sibirev , J. C. Harmand , F. Glas
DOI: 10.1103/PHYSREVB.78.235301
关键词:
摘要: Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine conditions under formation possible. General expression nanowire rate as function its radius and obtained analyzed. The also describes transformation from cubic hexagonal crystal phase nanowires. It shown that observed structure controlled mainly by kinetics. Structural diagrams probabilities are calculated functions supersaturation within plausible range material parameters. Numerical estimates domains mixing purity presented
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