Oxidation of polycrystalline silicon carbide
作者： Linus U.J.T. Ogbuji
DOI: 10.1016/0272-8842(86)90040-4
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摘要: Abstract The oxidation of densified silicon carbide has been studied by micrography and infrared reflection spectrometry, in addition to gravimetric techniques X-ray diffraction. Of particular interest was the relative resistance varieties material treated various ways. hot-pressed type oxidized less readily than sintered, annealing found impart substantial oxidation; these are thought be impurity effects.
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