SOI Substrate formed by bonding
作者： Nobuhiko Sato , Kiyofumi Sakaguchi , Takao Yonehara
DOI:
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摘要: A process for manufacturing a semiconductor substrate, comprising the step of preparing first substrate which has surface layer portion subjected to hydrogen annealing, separation-layer formation implanting ions or like into from side portion, thereby form separation layer, adhesion bonding and second each other so that may lie inside, multilayer structure, transfer separating structure by utilizing less-defective onto substrate. The is single-crystal silicon in defects inherent bulk wafer, such as COPs FPDs, are decreased.
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