Magnetotransport properties of single crystal Co2MnGe/NM/Co2MnGe trilayers epitaxially grown on GaAs (001)
作者： G. A. Prinz , T. Ambrose , J. J. Krebs
DOI: 10.1063/1.1359476
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摘要: The magnetotransport properties of single crystal trilayers 60 A Co2MnGe/NM/30 A Co2MnGe where NM is a nonmagnetic spacer material has been studied. samples were grown by molecular beam epitaxy on GaAs (001) substrates. 2 to 1 ratios in thickness the layers allows for easy determination which ferromagnetic have switched during magnetometry measurements. weak 90° coupling observed with either Mn or V layer. In these coupled films giant magnetoresistance type less than 1% measured at room temperature.
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