Chemical mechanical polishing composition and process

摘要: A composition for chemical mechanical polishing includes a slurry. sufficient amount of selectively oxidizing and reducing compound is provided in the to produce differential removal metal dielectric material. pH adjusting adjusts provide that makes improved by including an effective hydroxylamine compound, ammonium persulfate, which indirect source hydrogen peroxide, peracetic acid or periodic acid. method comprises applying slurry material surface applied The adjusted material,