Morphology and structure of nanocrystalline p-doped silicon films produced by hot wire technique

摘要: Abstract In this paper we report results of nanocrystalline p-doped silicon films produced by hot wire chemical vapour deposition technique with Ta filaments, using a pre-mixed gas containing silane, diborane, methane, helium and hydrogen. The data obtained show that the exhibit good optoelectronic properties surface morphology dependent on filament temperature hydrogen dilution. increase in temperature, keeping constant dilution (87%), promotes preferential growth crystals {2 2 0} direction, giving rise to pyramidal-like structure. This behaviour is observed SEM micrographs as well micro-Raman X-ray diffraction analyses. On other hand, contributes an both {1 1 1} peaks. Thus, combining film can be controlled from smooth structure, without decreasing crystalline fraction films. structure also reflected stability electrical dark conductivity. We observe property depends range measurements exposition time atmospheric conditions.