Semiconductor radiative device
作者： Takeshi Kikawa , Shigeo Goto
DOI:
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摘要: A semiconductor radiative device comprises a layered film comprised of low-refraction first dielectric and high-refraction second having refraction index greater than that the film, formed on at least one facets an optical cavity. The is amorphous nitrogen-doped hydrogenated silicon. capable stably operating in high-output mode for long period time.
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