Semiconductor laser and method of manufacturing the same
作者： Koichi Genei , Makoto Okada
DOI:
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摘要: A semiconductor laser of present invention is constructed by an aluminium oxide (Al2O3) film on end surface opposed to a beam emission the laser, silicon nitride (SiNx, or Si3N4) film, and (SiO2) film. These films are made successively method Electron Cyclotron Resonance (ECR) sputtering.
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