作者: Ken Ohbayashi , Mitsuhiro Matsumoto
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摘要: A semiconductor laser element includes: a laminated structure for emitting light, including an active layer interposed between first cladding of first-conductivity type and second second-conductivity type, the having lower refractive indices than that layer; current light confining means stripe-shaped formed on surface side opposite to layer, driving in region corresponding wherein index is larger structure, includes at least one disposed layer.