Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same

作者: Ken Ohbayashi , Mitsuhiro Matsumoto

DOI:

关键词:

摘要: A semiconductor laser element includes: a laminated structure for emitting light, including an active layer interposed between first cladding of first-conductivity type and second second-conductivity type, the having lower refractive indices than that layer; current light confining means stripe-shaped formed on surface side opposite to layer, driving in region corresponding wherein index is larger structure, includes at least one disposed layer.

参考文章(6)
Hiroyuki Hosoba, Masafumi Kondou, Akinori Seki, Sadayoshi Matsui, Takahiro Suyama, Toshio Hata, Semiconductor laser device and a method of fabricating the same ,(1991)
Kunio Itoh, Masahiro Kume, Issei Ohta, Toru Takayama, Hiroki Naito, Hirokazu Shimizu, Hideyuki Sugiura, Low operating current and low noise semiconductor laser device for optical disk memories ,(1993)
Sakata Masaki, SEMICONDUCTOR LASER DEVICE ,(1994)
Kobayashi Kenichi, Semiconductor laser device ,(1990)
Yuichi Inoue, Hideki Goto, Kenji Shimoyama, Itaru Sakamoto, Semiconductor laser element ,(1993)
Ikeda Masao, Semiconductor laser device ,(1988)