Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering
作者： T. Kitayama , Y. Morita , K. Nakajima , K. Narumi , Y. Saitoh
DOI: 10.1016/J.NIMB.2015.07.089
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摘要: Abstract Amorphous silicon nitride films (thickness 30 nm) deposited on Si(0 0 1) were irradiated with 30–1080 keV C 60 and 100 MeV Xe ions to fluences ranging from 2 × 10 11 1 × 10 14 ions/cm 2 . The composition depth profiles of the samples measured using high-resolution Rutherford backscattering spectrometry. sputtering yields estimated derived profiles. Pronounced preferential nitrogen was observed in electronic energy loss regime. In addition, a large synergy effect between collisional also observed. calculated unified thermal spike model understand results. Although results reproduced total lowered sublimation energy, could not be explained. present suggest an additional mechanism related loss.
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