Sputtering of SiN films by 540 keV C602+ ions observed using high-resolution Rutherford backscattering spectroscopy
作者： K. Nakajima , Y. Morita , T. Kitayama , M. Suzuki , K. Narumi
DOI: 10.1016/J.NIMB.2014.02.042
关键词: Analytical chemistry 、 Nitrogen 、 Atomic physics 、 Silicon 、 Materials science 、 Irradiation 、 Sputtering 、 Fluence 、 Ion 、 Spectroscopy 、 Silicon nitride
摘要: Abstract Amorphous silicon nitride films deposited on Si(0 0 1) were irradiated with 540 keV C60 ions to fluences ranging from 2.5 × 1011 1 × 1014 ions/cm2. The composition depth profiles of the samples measured using high-resolution Rutherford backscattering spectroscopy. Both and nitrogen in film decrease rapidly fluence. From observed result sputtering yields are obtained as 3900 ± 500 N atoms/ion 1500 ± 1000 Si atoms/ion. Such large yield cannot be explained by either elastic or electronic sputtering, indicating that synergy effect between plays an important role.
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