Formation of ion tracks in amorphous silicon nitride films with MeV C 60 ions
作者： T. Kitayama , Y. Morita , K. Nakajima , K. Narumi , Y. Saitoh
DOI: 10.1016/J.NIMB.2015.04.051
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摘要: Amorphous silicon nitride (a-SiN) films (thickness 5–100 nm) were irradiated with 0.12–5 MeV C60, 100 Xe, 200 Kr, and 420 Au ions. Ion tracks clearly observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) except for Xe Kr. The HAADF-STEM images showed that the ion consist of a low density core (0.5–2 nm in radius) high shell (several radius). radii are not simply correlated electronic energy loss indicating nuclear plays an important role both formations. track well reproduced by unified thermal spike model two thresholds
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