Mosture barrier for floating gate transistors

作者: Roger S. Countryman , N. Manos Ii Peter

DOI:

关键词:

摘要: A floating gate device has a control and gate. The is for charging to set logic state therein. Moisture problem in causing the either lose its charge or becoming charged wrong state. thin nitride layer deposited over along sides of as moisture barrier. This sufficiently so provide only insignificant attenuation ultra-violet light used neutralize not passivation that desirable phoshosilicate glass (PSG) can be passivation.

参考文章(3)
Kanetake Takasaki, Mikio Takagi, Kenji Koyama, UV erasable EPROM with UV transparent silicon oxynitride coating ,(1984)
Barbara A. Heath, Self-aligned contact process ,(1986)