Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure
作者： Noriaki Sato
DOI:
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摘要: A semiconductor device including a substrate with P-type well formed in the and gate insulator layer on substrate. N-type diffusion regions are both sides of layer. electrode is layer, where has top side surfaces. The respectively form gate, source drain N-channel MOS transistor. An insulating covers portion regions, surfaces at least surface electrode. wall which made an material to provide smooth coverage around aligns edge said stops covering regions.
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