Single-poly EEPROM
作者： Ching-Sung Yang , Shih-Jye Shen , Ching-Hsiang Hsu
DOI:
关键词:
摘要: A single-poly EEPROM is disclosed. The includes a first PMOS transistor that serially connected to second transistor. and transistors are both formed on an N-well of P-type substrate. floating gate, P + doped drain region, source region. gate region the serves as An erase extending for erasing provided in
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