MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要: PURPOSE:To improve the accuracy of mask alignment after epitaxial growth, and yield, by providing a small step part for an mark at time photographic treatment, with film whose material controls growth. CONSTITUTION:When semiconductor layer 3 is formed on Si substrate 1, 2 exposing equipment previously surface. On surface containing 2, growth formed, thereon formed. By forming amorphous part, 6 which not epitaxially grown thereon. 6, independently crystal orientation base 1. Thereby improving yield.