Novel dry-developed focused ion beam lithography scheme for nanostructure applications

摘要: Focused ion beam (FIB) lithography has certain advantages over the rival direct-write electron in terms of resist sensitivity, scattering and proximity effects. Combining FIB with both top surface imaging (TSI) reactive etching (RIE) will further strengthen its towards anisotropic processing thicker layers comparison to those used by conventional processes. Some inherent limitations lithography, such as low-penetration depth substrate damage, could also be eliminated. Our recently developed NERIME (negative image dry etching) process combines these due incorporation focused Ga (Ga FIB) exposure, near UV silylation development steps. The work described this paper follows our investigations into for nanostructure applications outlines a simplified (two-step) process, which incorporates Ga+ exposure oxygen development. two-step is negative working TSI system DNQ/novolak based resists. In paper, nanometer patterns small 30 nm having high aspect ratio up 15 were resolved using