作者: K.Y. Chan , W.S. Tsang , C.L. Mak , K.H. Wong
DOI: 10.1016/J.JEURCERAMSOC.2005.03.063
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摘要: Abstract 0.65PbMg 1/3 Nb 2/3 O 3 –0.35PbTiO (PMN–PT) thin films with different deposition temperatures were fabricated on (0 0 1)MgO single crystal substrates using pulsed laser (PLD). X-ray diffraction (XRD) showed that the are epitaxially grown substrates. Spectroscopic ellipsometer (SE) was used to characterize optical properties including refractive indices as well extinction coefficients of these PMN–PT in energy range 0.75–3.5 eV. By fitting measured ellipsometeric spectra, film thicknesses, surface roughness and derived for all films. The thickness obtained by SE consistent those scanning electron microscopy (SEM) atomic force (AFM) respectively. band gap energies deduced from Tauc equation. These values comparable transmittance measurements. Our analysis revealed optimum index emerges at ∼670 °C.