Shower head of a wafer treatment apparatus having a gap controller

作者: Hye-Jin Jo , Jong-Chul Park , O-Ik Kwon , Dong-Hyun Kim

DOI:

关键词:

摘要: A shower head for adjusting distribution of a reactant gas in process region semiconductor manufacturing reaction chamber, wherein top plate has port introducing the into chamber; face plate, having through holes, disposed opposite region; first baffle between and capable moving up or down, surface that defines gap forming lateral flow passage; second controller determining widths gaps.

参考文章(29)
James W. Rudolph, Lowell D. Bok, Mark J. Purdy, Pressure gradient CVI/CVD apparatus, process, and product ,(1995)
Michael Steinbach, Richard B Balsley, Jerry C Wyss, Charles E Miller, Louis T Yoshida, Micro mass flow control apparatus and method ,(1998)
Shigeki Tozawa, Shunichi Iimuro, Yoshikazu Ito, Hiromitsu Matsuo, Akira Nozawa, Kazushi Tomita, Motohiro Hirano, Yutaka Miura, Plasma etching system ,(1993)
Raymond L. Degner, Eric H. Lenz, Composite electrode for plasma processes ,(1990)
Fangli Hao, Javad Pourhashemi, Rajinder Dhindsa, Reaction chamber component having improved temperature uniformity ,(1999)
Steve H. Chiao, Anh N. Nguyen, Salvador P. Umotoy, Lawrence C. Lei, One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system ,(2001)
Tsunehiko Tsubone, Kouji Nishihata, Atsushi Itou, Shigekazu Kato, Vacuum processing apparatus ,(2001)