Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution

摘要: Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming metal interconnection and protecting layer on substrate; contact hole layer; isolating by molding an etching stop stacked thereon; sacrificial so as to fill hole; photoresist with opening expose such of aligns trench in penetrate performing wet substrate having remove layer, wherein step is performed using organic compound fluoride ion-based buffered solution.