The Coherent Interlayer Resistance of a Single, Rotated Interface between Two Stacks of AB Graphite

摘要: The coherent, interlayer resistance of a misoriented, rotated interface between two stacks AB graphite is determined for variety misorientation angles. quantum-resistance the ideal stack on order 1 to 10 m$\Omega \mu{\rm m}^2$. For small rotation angles, coherent exponentially approaches quantum at energies away from charge neutrality point. Over range intermediate increases with cell size minimum unit cells. Larger sizes, similar may not follow this trend. energy dependence transmission described.