Mask technologies for soft-x-ray projection lithography at 13 nm.
作者： D. M. Tennant , L. A. Fetter , L. R. Harriott , A. A. MacDowell , P. P. Mulgrew
DOI: 10.1364/AO.32.007007
关键词:
摘要: We describe a variety of technologies for patterning transmissive and reflective soft x-ray projection lithography masks containing features as small 0.1 μm. The transmission fabricated use at 13 nm are one type, Ge-absorbing layer patterned on boron-doped Si membrane. Reflective were by various methods that included absorbing layers formed top multilayer reflectors, multilayer-reflector-coating removal reactive ion etching, damage regions implantation. For the first time, we believe, process absorber repair does not significantly reflectance coating reflection mask is demonstrated.
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osti.gov参考文章(9)
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