Two-dimensional Si photonic crystals on oxide using SOI substrate

摘要: Two-dimensional photonic crystals (2D-PhCs) on oxide can be easily incorporated into integrated circuits. Although an asymmetrical structure (air/PhC/oxide) is advantageous in terms of ease fabrication, it has been pointed out that such a may have no band gap (PBG). To clarify the characteristics structure, we calculated using three-dimensional (3D) FDTD method and measured transmission fabricated 2D Si-PhC oxide. The calculations show use quasi-PBG even when PhC thickness satisfies single-mode condition. correspond to reveal existence quasi-PBG. These results Si-PhC-on-oxide applied various optical devices.