Method and apparatus for a flash memory device comprising a source local interconnect

摘要: A method for forming a flash memory device having local interconnect connecting source regions of plurality transistors within sector allows highly selective wet etch dielectric region overlying the region. An embodiment comprises use an etch-resistant layer covering various features such as any gate oxide remaining over region, spacers along sidewalls transistor stacks, and capping transistor. in-process semiconductor resulting from inventive is also disclosed.