Phase diagram of boron-doped diamond revisited by thickness-dependent transport studies

摘要: We report on a detailed study of the electronic properties series boron-doped diamond epilayers with dopant concentrations ranging from 1.10^ 20 to 3.10^21 cm −3 and thicknesses (d ⊥) 2 µm 8 nm. By using well-defined mesa patterns that minimize parasitic currents induced by doping inhomogeneities, we have been able unveil new phase diagram differing all previous reports. show onset superconductivity does actually not coincide metal-insulator transition in this system. Moreover dimensional crossover 3D 2D transport could be reducing d ⊥ both metallic non-superconducting superconducting epilayers, without any reduction Tc latter.