Structural, optical and electrical properties of CuInS2 thin films prepared by chemical spray pyrolysis

作者: Tomoaki Terasako , Yuji Uno , Seiki Inoue , Tetsuya Kariya , Sho Shirakata

DOI: 10.1002/PSSC.200669597

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摘要: Polycrystalline CuInS2 thin films were prepared by chemical spray pyrolisis (CSP) on glass sustrate from the ethanol aqueous solution containing CuCl2, InCl3 and thiourea. Structual, electrical optical properties systematically studied in terms of substrate temperature, pH ion ratio (Cu/In) solution. Although In-rich composed In2S3, In2S3 content film decreased with Cu/In ratio. Appearance Raman peaks at 288 298 cm-1 indicated that contained chalcopyrite CuAu phases. Typical grain size Cu-rich was 200 nm. Optical gap energies approximately 0.1-0.2eV smaller than bandgap energy bulk crystal. Resisitivity without secondary phase 0.2–5 Ωcm. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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