Formation of nanotunnels inside a resist film in laser interference lithography.
作者： Qi Wei , Fanhua Hu , Liyuan Wang
DOI: 10.1021/ACS.LANGMUIR.5B00194
关键词:
摘要: A few kinds of 2-diazo-1-naphthoquinone-4-sulfonates poly(4-hydroxylstyrene) were prepared to form one-component i-line photoresists. In the laser interference lithography experiments some photoresists, nanotunnels observed be aligned in interior resist film. The shape and size remain virtually unchanged even under an increased exposure dose, indicating that energy is confined within tunnel space. formation results from effect standing waves permeation developer surface deep into films.
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