Colossal electroresistance and electron instability in strongly correlated electron systems
作者： N A Tulina
DOI: 10.1070/PU2007V050N11ABEH006396
关键词:
摘要: Studies of the electron instability effects (EIEs) in structures based strongly correlated systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These manifest themselves a change several orders magnitude resistive state normal metal–HTSC or metal–DM (doped manganite) interface an electric field under significant current injection conditions. The results studying HTSC- doped-manganite-based heterojunctions considered. EIEs heterostructures compared effect on properties SCES thin fllms gate-containing devices. general features distinctions physics these ðhenomena analyzed.
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