作者: M. Rothschild , J. H. C. Sedlacek , D. J. Ehrlich
DOI: 10.1063/1.97623
关键词:
摘要: Laser direct‐write etching of the refractory metals Mo and W has been developed using reactions in Cl2 NF3 vapors. Rates high spatial resolution are simultaneously optimized a two‐vapor halogenation/development sequence, based on surface modification. Local‐area laser chlorination metal is used to predispose areas subsequent bulk etching.