YAG laser-assisted etching of silicon for fabricating sensors and actuators
作者： K Minami , Y Wakabayashi , M Yoshida , K Watanabe , M Esashi
DOI: 10.1088/0960-1317/3/2/008
关键词:
摘要: YAG laser-assisted etching techniques were developed and investigated for realising silicon microstructures. Gases, including HCl, SF6 NF3 used etching. These produce volatile exhaust at atmospheric pressure. was applied to fabricate an electrostatic microactuator, resonating sensors accelerometers. This resistless dry can be three-dimensional
harvard.edu
elsevier.com
sci-hub.se 参考文章(9)
Helmut F. Wolf, Silicon semiconductor data Pergamon Press. ,(1969)
P. Rai-Choudhury, Sulfur Hexafluoride as an Etchant for Silicon Journal of The Electrochemical Society. ,vol. 118, pp. 266- 269 ,(1971) , 10.1149/1.2407993
W. H. Shepherd, Vapor Phase Deposition and Etching of Silicon Journal of The Electrochemical Society. ,vol. 112, pp. 988- 994 ,(1965) , 10.1149/1.2423357
Y. Horiike, N. Hayasaka, M. Sekine, T. Arikado, M. Nakase, H. Okano, Excimer-laser etching on silicon Applied Physics A. ,vol. 44, pp. 313- 322 ,(1987) , 10.1007/BF00624598
D. J. Ehrlich, R. M. Osgood, T. F. Deutsch, Laser chemical technique for rapid direct writing of surface relief in silicon Applied Physics Letters. ,vol. 38, pp. 1018- 1020 ,(1981) , 10.1063/1.92228
M. Rothschild, J. H. C. Sedlacek, D. J. Ehrlich, Laser photochemical etching of molybdenum and tungsten thin films by surface halogenation Applied Physics Letters. ,vol. 49, pp. 1554- 1556 ,(1986) , 10.1063/1.97623
T. J. Chuang, Multiple photon excited SF6 interaction with silicon surfaces Journal of Chemical Physics. ,vol. 74, pp. 1453- 1460 ,(1981) , 10.1063/1.441132
Y. Rytz-Froidevaux, R. P. Salath�, H. H. Gilgen, Laser Generated Microstructures Applied Physics A. ,vol. 37, pp. 121- 138 ,(1985) , 10.1007/BF00617497
K. Minami, Y. Wakabayashi, T. Matsubara, K. Yoshimi, M. Yoshida, M. Esashi, YAG laser assisted etching for releasing silicon micro structure international conference on micro electro mechanical systems. pp. 53- 58 ,(1993) , 10.1109/MEMSYS.1993.296951