P-N junction etch-stop technique for electrochemical etching of semiconductors
作者： Harry L. Tuller , Richard Mlcak
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摘要: A method of electrochemical machining micromechanical structures from a silicon substrate having both p and n-type regions in hydrofluoric electrolyte solution is disclosed. Only the p-type region may be selectively etched by providing means for inhibiting injection holes through region. Inhibiting includes forming layer over region, material inert to etchant imposing reverse electrical bias between recombination centers induce injected into
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