Oxide growth and its dielectrical properties on alkylsilated native-SiO2/Si surface
作者： X.N Xie , H.J Chung , C.H Sow , A.T.S Wee
DOI: 10.1016/J.CPLETT.2004.02.097
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摘要: Abstract The kinetics and mechanism of probe-induced oxide growth on an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) passivated native-SiO2/Si surface have been investigated using atomic force microscopy (AFM). It was found that oxidation strongly depends tip polarity the local chemistry OTS molecules. At negative voltage, grows involves a decomposition depletion SAM. While under positive bias, molecules are partially degraded. dielectrical properties were characterized by I–V measurements current sensing AFM. barrier height AFM grown oxide, in comparison with thermal SAM, determined. Current spikes relating to release single charge also observed curves oxide.
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