XPS study of arsenic doped ZnO grown by Atomic Layer Deposition
作者： D. Snigurenko , R. Jakiela , E. Guziewicz , E. Przezdziecka , M. Stachowicz
DOI: 10.1016/J.JALLCOM.2013.08.061
关键词:
摘要: Abstract Arsenic-doped ZnO films were formed by thermal annealing of epitaxial grown Atomic Layer Deposition (ALD) in arsenic atmosphere at temperature 850–950 °C. X-ray photoelectron spectroscopy (XPS) studies the ZnO:As revealed complex As3d core level spectra three components located about 41 eV, 45 eV and 47.5 eV below Fermi level. The component binding energy (BE) was found to be correlated with acceptor bound A°X exciton state observed low photoluminescence. This observation strongly supports previously postulated assumption that origin can ascribed atoms As Zn –2V complexes as a result high annealing. is also supported evident valence band shift towards film annealed 950 °C.
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