Fabrication and characterization of magnetron sputtered arsenic doped p-type ZnO epitaxial thin films
作者： Amit Kumar , Manoj Kumar , Beer Pal Singh
DOI: 10.1016/J.APSUSC.2010.05.050
关键词: Photoluminescence 、 Doping 、 Homojunction 、 Optoelectronics 、 Sputter deposition 、 Thin film 、 Substrate (electronics) 、 Materials science 、 Mineralogy 、 Sputtering 、 Layer (electronics)
摘要: Abstract Arsenic doped p-type ZnO thin films were grown on sapphire substrate by magnetron sputtering. As reveal conduction confirmed Hall-effect and photoluminescence measurements. The film with a hole concentration of 2.16× 1017 cm−3, mobility 1.30 cm2/V.s resistivity 22.29 Ω-m obtained at temperature 700 °C. homojunction synthesized in-situ deposition p-ZnO layer Al n-ZnO showed p-n diode like characteristics. X-ray pole figure Transmission Electron Microscope studies confirm epitaxial nature the films. Photoluminescence results exhibit peaks associated donor acceptor pair emission.
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