Fabrication and structural, electrical characterization of i-ZnO/n-ZnO nanorod homojunctions

摘要: Abstract Well-aligned ZnO nanorods were synthesized by a vapor phase transport method on buffer layer coated n-Si substrates. X-ray diffraction and scanning electron microscopy results showed that the deposited crystallize in wurtzite structure are highly textured with their c-axes normal to substrate show clearly hexagonal morphology. A heavily compensated intrinsic (i-ZnO) doped both Mg Na was nominally undoped (which natural n-type behavior) produce an i-ZnO/n-ZnO homojunction. The i-ZnO consisted of grainy shape nano-crystallites wavy surface current–voltage (I–V) characteristics these structures temperature range 150–300 K have been analyzed framework standard thermionic emission (TE) theory assumption Gaussian distribution barrier heights. values zero bias height (Φb0) ideality factor (n) found be strongly dependent whereby n decreases while Φb0 increases increasing temperature. ln(I0/T2) vs q/kT plot shows straight line behavior activation energy (Ea = Φb0) Richardson constant (A*) determined from intercept slope 0.926 eV 2.61 × 10−8 A cm−2 K−2, respectively. This value A* is much lower than known 32 A cm−2 K−2 for ZnO. Thus, modified ln ( I 0 / T 2 ) − σ q k vs. based heights used which yields mean Φ ¯ b effective (A**) 1.032 eV 34.85 A cm−2 K−2, A** closer theoretical