Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx
作者： V. W. L. Chin , R. J. Egan , T. L. Tansley
DOI: 10.1063/1.351700
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摘要: The electron mobility in InAs1−xSbx is calculated for an ionized impurity density between 5× 1014 cm−3 and 1 × 1017 at 77 K. various methods of calculating are discussed their respective merits limitations summarized. In general, alloy scattering the limiting process low carrier (n ≤ 1015 cm−3) while important higher density. effect compensation (NA/ND) on field drift also a range concentrations x=0.1, 0.6, 0.9, 1.0 compositions particular technological significance. Compensation found to degrade quite significantly all cases. calculations x=1.0 (InSb) be good agreement with available experimental data.
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