Growth, morphology and electrical transport properties of MOCVD-grown p-InSb
作者： R J Egan , V W L Chin , T L Tansley
DOI: 10.1088/0268-1242/9/9/004
关键词: Analytical chemistry 、 Electron mobility 、 Crystal growth 、 Condensed matter physics 、 Acceptor 、 Metalorganic vapour phase epitaxy 、 Fermi level 、 Indium 、 Electrical resistivity and conductivity 、 Atmospheric temperature range 、 Chemistry
摘要: p-type InSb was prepared from trimethyl indium and antimony at temperatures between 420 490 degrees C. A narrow window in the growth conditions of temperature V/III ratio found for InSb, with non-uniform, inhomogeneous epilayer other than optimum. Optimum morphologies were achieved ratios 2.2 2.5 a 450 C use low pressures observed to result an enhanced uniformity. The displayed type conversion over range 70-300 K; analysis transport properties is then complicated by contributions two carriers. Calculations using Fermi-Dirac statistics carried out, identifying majority carrier be holes entire considered. also identify acceptor level activation energy 16+or-0.5 meV, concentration (2.65+or-0.02)*1017 cm-3, good agreement conductivity measurements, low-temperature hole mobility cm2 V-1 s-1. detailed employing extended determine dependence Fermi InAs various impurity compositions.
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