High‐mobility InSb grown by organometallic vapor phase epitaxy
作者： D. K. Gaskill , G. T. Stauf , N. Bottka
DOI: 10.1063/1.105069
关键词:
摘要: … The highest mobility InSb epilayer grown to date by organometallic vapor phase … -type InSb substrate, an unintentionally doped layer had a 77 K n-type’carrier concentration and mobility …
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(6)
R. M. Biefeld, S. R. Kurtz, I. J. Fritz, Doping and p-n function formation in InAs 1-x Sb x /InSb SLS's by MOCVD Journal of Electronic Materials. ,vol. 18, pp. 775- 780 ,(1989) , 10.1007/BF02657532
Robert M. Biefeld, The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition Journal of Crystal Growth. ,vol. 75, pp. 255- 263 ,(1986) , 10.1016/0022-0248(86)90035-7
Alan J. Strauss, Distribution Coefficients and Carrier Mobilities in InSb Journal of Applied Physics. ,vol. 30, pp. 559- 563 ,(1959) , 10.1063/1.1702405
R. Kaplan, R. J. Wagner, Cyclotron resonance characterization of ion‐implanted carriers in semiconductors Journal of Vacuum Science and Technology. ,vol. 13, pp. 899- 902 ,(1976) , 10.1116/1.569016
P. K. Chiang, S. M. Bedair, Growth of InSb and InAs(1-x)Sb(x) by OM-CVD Journal of The Electrochemical Society. ,vol. 131, pp. 2422- 2426 ,(1984) , 10.1149/1.2115308
D. E. Holmes, G. S. Kamath, Growth characteristics of LPE InSb and InGaSb Journal of Electronic Materials. ,vol. 9, pp. 95- 110 ,(1980) , 10.1007/BF02655217